Fabrication of uniaxially/biaxially tensile-strained Ge by strain redistribution method
نویسندگان
چکیده
Tensile strain is a widely discussed method to improve electron mobility and luminescence of Ge has been applied in infrared photodetectors. By combining thin film crimping technology with microelectronic processing technology, uniaxial or biaxial tensile achieved suspended micro-bridge structure. The state can be manipulated by adjusting the sizes patterns, 3.46% 0.31% have demonstrated this work. three-dimensional finite element analysis proves that originates from redistribution between W structure, finally, simulation results agree experimental data very well.
منابع مشابه
Highly tensile-strained Ge/InAlAs nanocomposites
Self-assembled nanocomposites have been extensively investigated due to the novel properties that can emerge when multiple material phases are combined. Growth of epitaxial nanocomposites using lattice-mismatched constituents also enables strain-engineering, which can be used to further enhance material properties. Here, we report self-assembled growth of highly tensile-strained Ge/In0.52Al0.48...
متن کاملInfrared absorption of n-type tensile-strained Ge-on-Si.
We analyze the IR absorption of tensile-strained, n-type Ge for Si-compatible laser applications. A strong intervalley scattering from the indirect L valleys to the direct Γ valley in n+ Ge-on-Si is reported for the first time to our knowledge. The intervalley absorption edge is in good agreement with the theoretical value. On the other hand, we found that the classical λ2-dependent Drude model...
متن کاملRoom Temperature Electroluminescence from Tensile-Strained Si0.13Ge0.87/Ge Multiple Quantum Wells on a Ge Virtual Substrate
Direct band electroluminescence (EL) from tensile-strained Si0.13Ge0.87/Ge multiple quantum wells (MQWs) on a Ge virtual substrate (VS) at room temperature is reported herein. Due to the competitive result of quantum confinement Stark effect and bandgap narrowing induced by tensile strain in Ge wells, electroluminescence from Γ1-HH1 transition in 12-nm Ge wells was observed at around 1550 nm. A...
متن کاملA new route toward light emission from Ge: tensile-strained quantum dots.
The tensile-strained Ge quantum dot (QD) is proposed as a new route for the realization of direct band gap conversion in Ge. Ge QDs were successfully grown on an InP substrate by molecular beam epitaxy. The strain field in the QDs were analyzed by high resolution transmission electron microscopy and simulated by the finite element method based on the measured geometries. The strain field in the...
متن کاملTensile-strained germanium microdisk electroluminescence.
We report room temperature electroluminescence of tensile-strained germanium microdisks. The strain is transferred into the microdisks using silicon nitride stressors. Carrier injection is achieved with Schottky contacts on n-type doped germanium. We show that a biaxial tensile-strain up to 0.72% can be transferred by optimizing the carrier injection profile. The transferred strain is measured ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: AIP Advances
سال: 2023
ISSN: ['2158-3226']
DOI: https://doi.org/10.1063/5.0153265